Analog Devices’ RF power amplifiers are based on GaN and GaAs semiconductor technology spanning kHz to 95 GHz. In addition to bare die and surface mount components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our RF power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for a wide variety of wired and wireless applications. Many of the RF power amplifiers cover decades of bandwidth, supporting instrumentation and military applications with a single IC. There are numerous narrowband products supporting both telecommunication and satellite communication links as well. The large selection of products offers the ability to choose the right product for the application.
Analog Devices’ RF power amplifiers are based on GaN and GaAs semiconductor technology spanning kHz to 95 GHz. In addition to bare die and surface mount components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our RF power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for a wide variety of wired and wireless applications. Many of the RF power amplifiers cover decades of bandwidth, supporting instrumentation and military applications with a single IC. There are numerous narrowband products supporting both telecommunication and satellite communication links as well. The large selection of products offers the ability to choose the right product for the application.
