ADRF5162

预发布

High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz

产品技术资料帮助

ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许,也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

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产品详情

  • Frequency range: 0.4 GHz to 8 GHz
  • Low insertion loss: 0.6 dB typical to 4 GHz
  • High Isolation: 45 dB typical to 4 GHz
  • High input linearity
    • 0.1 dB power compression (P0.1dB): 49 dBm
    • Third order intercept (IP3): >76 dBm
  • High power handling at TCASE = 85°C:
    • Insertion loss path
      • Average: 45.5 dBm
      • Pulsed (>100 ns pulse width, 15% duty cycle): 48.5 dBm
      • Peak (≤100 ns peak duration, 5% duty cycle): 50 dBm
    • Hot-switching at RFC: 43 dBm
  • 0.1 dB RF settling time with PIN ≤ 43 dBm: 1.2 μs
  • No low frequency spurious
  • Positive control interface: CMOS/LVTTL-compatible
  • 24-lead, 4.0 mm × 4.0 mm LFCSP package
ADRF5162
High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
ADRF5162 Functional Block Diagram ADRF5162  Pin Configuration
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工具及仿真模型


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eval board
EVAL-ADRF5162

Evaluating the ADRF5162 High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz

特性和优点

  • Full featured evaluation board for the ADRF5162
  • Easy connection to the test equipment
  • Thru line for calibration

产品详情

The ADRF5162 is a single-pole, double-throw (SPDT) switch manufactured in the silicon process.

This user guide describes the ADRF5162-EVALZ evaluation board, designed to simply evaluate the features and performance of the ADRF5162. Figure 1 shows a photograph of the evaluation board.

The ADRF5162 data sheet provides full specifications for the ADRF5162. Refer to the ADRF5162 data sheet with this user guide when using the ADRF5162-EVALZ.

EVAL-ADRF5162
Evaluating the ADRF5162 High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
EVAL-ADRF5162 Board Photo Angle View EVAL-ADRF5162 Board Photo Top View EVAL-ADRF5162 Board Photo Bottom View

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