ADPA9007
ADPA9007
推荐新设计使用DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
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产品详情
- Wideband, internally-matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 12.5 dB typical at 2 GHz to 16 GHz
- OP1dB: 33 dBm typical at 2 GHz to 16 GHz
- PSAT: 34 dBm typical at 2 GHz to 16 GHz
- OIP3: 45 dBm typical at 2 GHz to 16 GHz
- 32-Lead, 5.00 mm × 5.00 mm, LFCSP_CAV package
The ADPA9007 is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.
The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.
The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.
Applications
- Electronic warfare
- Radar
- Test and measurement equipment
参考资料
硬件生态系统
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降压型稳压器 1 | ||
LT8643S | 推荐新设计使用 | 具 2.5μA 静态电流的 42V、6A 同步降压型 Silent Switcher 2 |
工具及仿真模型
S-参数 1
评估套件
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