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HMC3587

RECOMMENDED FOR NEW DESIGNS

HBT Gain Block MMIC Amplifier, 4 - 10 GHz

Data Sheet (Rev. 3)

Part Models: 2
1ku List Price: price unavailable

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Part Details

High Output IP3: +25 dBm
Single Positive Supply:
+5V

Low Noise Figure: 3.5 dB⁽¹⁾
12 Lead 3×3 mm SMT Package: 9 mm²

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC3587: HBT Gain Block MMIC Amplifier, 4 - 10 GHz Data Sheet (Rev.3) 07/27/2017

Application Note 2

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC3587LP3BE	12-Lead LFCSP (3mm x 3mm x 0.85mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC3587LP3BETR	12-Lead LFCSP (3mm x 3mm x 0.85mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC3587 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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