HMC8205

RECOMMENDED FOR NEW DESIGNS

0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

Data Sheet (Rev. A)

Part Models: 3
1ku List Price: price unavailable

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Part Details

HMC8205BF10 Features

High P_SAT: 46 dBm
High power gain: 20 dB
High PAE: 38%
Instantaneous bandwidth: 0.3 GHz to 6 GHz
Supply voltage: V_DD = 50 V at 1300 mA
10-lead LDCC package

HMC8205BCHIPS Features

High output power: 45.5 dBm typical at P_IN = 24 dBm
High power gain: 22 dB typical at P_IN = 24 dBm
High PAE: 40% typical at P_IN = 28 dBm
Die size: 4.8 mm × 3.4 mm × 0.1 mm

Part Models: 3
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC8205BCHIPS: 0.4 GHz to 6 GHz, 35 W, GaN, Power Amplifier Data Sheet (Rev.A) 12/13/2018

Application Note 2

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC8205BCHIPS	CHIPS OR DIE	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC8205BF10	10 ld LDCC (11.43x17.32mm)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC8205BF10-50	10 ld LDCC (11.43x17.32mm)	Material Declaration Reliablity Data	Ultra Librarian SamacSys

Part Models	Product Lifecycle	PCN

Dec 12, 2017 - 17_0199 Change in First Level Packaging for HMC1086F10, HMC1087F10, HMC8205BF10.
		PCN17_0199_Form Material_Report
HMC8205BF10	PRODUCTION	PCN17_0199_Form Material_Report

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

Open Tool

S-Parameter 1

HMC8205B-DIE S-Parameters

Evaluation Kits

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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Features and Benefits

Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
Operation in Drain Pulsed Mode or Gate Pulsed Mode
Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

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