DS1230W
PRODUCTION3.3V 256k Nonvolatile SRAM
Part Details
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
- Unlimited write cycles
- Low-power CMOS
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Optional industrial temperature range of -40°C to +85°C, designated IND
- JEDEC standard 28-pin DIP package
- PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM Module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documentation
Data Sheet 1
Reliability Data 1
Design Note 4
Technical Articles 1
This is the most up-to-date revision of the Data Sheet.
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